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◇ 科研论文(杂志与国际会议)-2012年
作者:[] 文章来源:[] 发布时间:[2017-07-13] 阅读次数:[1298]

01.Homoeepitaxial Branching: An Unusual Polymorph ofZinc Oxide Derived from Seeded Solution Growth.
ACSNANO,Vol.6, No.8, pp:7133-7141, 2012. Rajeevan Kozhummal, Yang Yang, Firat Güder, Andreas Hartel,
Lu Xiaoli,Umut M. Kücükbrayrak, Aurelio Mateo-Alonso, Miko Elwenspoek, Margit Zacharias.

02.
Large-Scale Nano Piezo Force Position Arrays as Ultrahigh-Resolution Micro- and Nanoparticle Tracker.
Advanced Functional Materials, Vol.22, No.24, pp:(7), 2012. Kittitat Subannajui, Andreas Menzel, Firat Güder,
Yang Yang, Katrin Schumann, Lu Xiaoli, Margit Zacharias.

03.
Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel
high electron mobility transistors.

Applied Physics Letters,Vol.100, No.1, 013507(3), 2012. Xue JunShuai, Zhang JinCheng, Hou YaoWei, Zhou Hao,
Zhang JinFeng, Hao Yue.

04.
Threading dislocation reduction in transit region of GaN terahertz Gunn diodes.
Applied Physics Letters, Vol.100, No.7, pp:072104(4), 2012. Li Liang, Yang Lin'an, Zhang Jincheng, Xue Junshuai,
Xu Shengrui, Lv Ling, Hao Yue, Niu Mutong.

05.
Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride.
Applied Physics Letters, Vol.100, No.14, pp:142105(3), 2012. Wang Shulong, Liu Hongxia, Gao Bo, Cai Huim
06.
Role of measurement voltage on hysteresis loop shape in Piezoresponse Force Microscopy.
Applied Physics Letters, Vol.101, No.19, pp:192902(4), 2012. E. Strelcov, Y. Kim, J. C. Yang, Y. H. Chu, P. Yu,
Lu Xiaoli, S. Jesse, S. V. Kalinin.

07.
Field dependency of magnetoelectric coupling in multilayered nanocomposite arrays: Possible contribution
from surface spins.

Applied Physics letters, Vol.101, No.22, pp:222902(4), 2012. Lu Xiaoli, Sining Dong. Li Xiaoguang, Marin Alexe,
Dietrich Hesse, Hao Yue.

08.
Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical
and Electrical Aspects.

IEEE Transaction Electron Devices, Vol.60, No.1, 2013. Dazheng Chen, Chunfu Zhang, Zhizhe Wang, Jincheng
Zhang, Qian Feng,Shengrui Xu, Xiaowei Zhou, and Yue Hao.

09.
A Bias-Varied Low-Power K-band VCO in 90 nm CMOS Technology.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Vol. 22, No. 6, 2012. Szu-Ling Liu,
Xin-Cheng Tian, Yue Hao, Albert Chin
10.
Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN.

Journal of Applied Physics, Vol.111, No.1, pp:013711(7), 2012. Wang Shulong, Liu Hongxia, Gao Bo,
Fan Jibin, Kuang Qianwei.

11.
Transport characteristics of AlGaN/GaN/AlGaN Double Heterostructures with high electron mobility.
Journal of Applied Physics, Vol.112,No.2, pp:023707(6), 2012. Fanna Meng, Jincheng Zhang, Hao Zhou,
Juncai Ma, Junshuai Xue, Lisha Dang, Linxia Zhang, Ming Lu, Shan Ai, Xiaogang Li, and Yue Hao

12.
A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency.
Journal of Applied Physics, Vol.111, No.10, pp:104514(5), 2012. Yang Lin'An, Long Shuang, Guo Xin, Hao Yue

13.
Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors
for electronic applications.

Journal of Applied Physics, Vol. 111, No.11, pp:114513(5), 2012. Xue Junshuai, Zhang Jincheng, Zhang Kai,
Zhao Yi, Zhang Linxia, Ma Xiaohua, Li Xiaogang, Meng Fanna, Hao Yue

14.Simulation study on 4H-SiC power devices with high-k dielectric FP terminations.
Diamond & Related Materials, Vol.22, pp:42-47, 2012. Song Qingwen, Zhang Yuming, Zhang Yimen,
Tang Xiaoyan.

15.
Improvements in (11-22) semipolar GaN crystal quality by graded superlattices.
THIN SOLID FILMS, Vol.520No.6, pp:1909-1912, 2012. Xu shengrui, Zhang Jincheng, Cao Yanrong,
Zhou Xiaowei, Xue Junshuai, Lin Zhiyu, Ma Juncai, Hao Yue.

16.A Novel Model for Implementation of Gamma Radiation Effects in GaAs HBTs.
IEEE Transactions on Microwave Theory and Techniques, Vol.60, No.12, pp:3693-3698, 2012. Zhang Jincan,
Zhang Yuming, Lu Hongliang, Zhang Yimen, Liu Min.

17.
Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown
on sapphire by pulsed metao organic chaemical vapor deposition.

Journal of Crystal Growth,Vol.343, No.1, pp:110-114, 2012. Xue Junshuai, Zhang Jincheng, Zhang Wei, Li Liang,
Meng Fanna, Lu Ming, Ning Jing, Hao Yue.

18.
Effect of defects on strain state in nonpolar a-plane GaN.
Journal of Crystal Growth, Vol.343, No.1, pp:122-126, 2012.Liu Ziyang, Xu Shengrui, Zhang Jincheng, Xue
Junshuai, Xue Xiaoyong, Niu Mutong, Hao Yue.

19.
Anisotropic Longitudinal Electron Diffusion Coefficient in Wurtzite Gallium Nitride.
Applied Physics A, published on line, 2012. Wang Shulong, Liu Hongxia, Fan Jibin, Ma Fei.
20.
Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN
heterostructure.

Solid-State Electronics
,Vol.68, pp:98-102, 2012. Li liang, Yang Lin'an, Zhang Jincheng, Zhang Linxia,
Dang Lisha, Kuang Qianwei, Hao Yue.

21.
Monte Carlo transport simulation of velocity undershoot in zinc blende and wurtzite InN.
Physics. Status Solidi B, Vol.249, No.9, pp:1761-1764, 2012. Wang Shulong, Liu Hongxia, Gao Bo.
22.
Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD.

Microelectronics Reliability, Vol.52, No.6, pp:1043-1049, 2012. Fan Jibin, Liu Hongxia, Kuang Qianwei,
Gao Bo, Ma Fei, Hao Yue.

23.
The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of
InGaP/GaAs single hetero junction bipolar transistors.

Microelectronics Reliability, Article in press, 2012. Zhang Jincan, Zhang Yuming, Lv Hongliang, Zhang Yimen,
Yang Shi
24.
A novel co-design and evaluation methodology for ESD protection in RFIC.
Microelectronics Reliability, Vol.52, No.11, pp: 2632-2639, 2012. Li Li, Liu Hongxia,Yang Zhaonian.
25.
Investigation of Controlled Current Matching in Polymer Tandem Solar Cells Considering Different Layer
Sequences and Optical Spacer.

Japanese Journal of Applied Physics, Vol.51, pp:122301(8), 2012. Wang zhizhe, Zhang Chunfu, Chen Dazheng,
Zhang Jincheng, Feng Qian, Xu Shengrui, Zhou Xiaowei, Hao Yue.
26.
Effective surface passivation of AlGaN/GaN heterostructures by using PH3 plasma treatment and HfO2 dielectric.
Phys. Status Solidi C, Vol.9, No.3-4, pp:924-937, 2012. Zhang Chunfu, Hao Yue, Feng Qian.
27.
A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric.
Chinese Physics B, Vol.21, No.1, pp:017304(5), 2012. Feng Qian, Xing Tao, Wang Qiang, Feng Qing, Li Qian,
Bi Zhiwei,Zhang JinCheng, Hao Yue.

28.
Structural and optical investigation of nonpolar a-plane GaN grown by metal organic chemical vapour deposition
on r-plane sapphire by neutron irradiation.

Chinese Physics B, Vol.21, No.2, pp:027802(5), 2012. Xu Shengrui, Zhang Jinfeng, Gu Wenping, Hao Yue,
Zhang Jincheng,Zhou Xiaowei, Lin Zhiyu, Mao Wei.
29.
Temperature dependences of Raman scattering in different types of GaN epilayers.
Chinese Physics B, Vol.21, No.2, pp:027803(5), 2012. Xue Xiaoyong, Xu Shengrui, Zhang Jincheng, Lin Zhiyu,
Ma Juncai,Liu Ziyang, Xue Junshuai, Hao Yue.
30.
Neutron irradiation effects on AlGaN/GaN high electron mobility transistors.
Chinese Physics B, Vol.21, No.3, pp:037104(5), 2012. lv Ling, Zhang Jincheng, Xue Junshuai, Ma Xiaohua,
Zhang Wei,Bi Zhiwei, Zhang Yue, Hao Yue.

 

31.Temperature-dependent characteristics of 4H SiC junction barrier Schottky diodes.
Chinese Physics B, Vol. 21, No. 3, pp:037304(5), 2012. Chen Fengping, Zhang Yuming, Zhang Yimen,
Tang Xiaoyan, Wang Yuehu, and Chen Wenhao.

32.
Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H SiC substrates.
Chinese Physics B, Vol. 21, No.3, pp: 038102(4), 2012. Wang Dangchao, Zhang Yuming, Zhang Yimen, Lei Tianmin,
Guo Hui, Wang Yuehu.

33.
A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped
lightly doped drain structures
.
Chinese Physics B, Vol.21, No.5, pp: 057304(6), 2012 . Ma Fei, Liu Hongxia, Kuang Qianwei, Fan Jibin.
34.
The influence and explanation of fringing-induced barrier lowering on sub-100nm MOSFETs with high-k gate
dielectrics.

Chinese Physics B, Vol.21, No.5, pp:057305(5), 2012. Ma Fei, Liu Hongxia, Kuang Qianwei, Fan Jibin.
35.
Performance of La2O3/InAlN/GaN metal-Oxide- semiconductor high electron mobility transistors.
Chinese Physics B, Vol.21, No.6, pp:067305(6), 2012. Feng Qian, Li Qian, Xing Tao, Wang Qiang,
Zhang Jincheng, Hao Yue

36.
Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization.
Chinese Physics B, Vol.21, No.6, pp:067803(5), 2012. Zhou Xiaowei, Xu Shengrui, Zhang Jincheng, Dang Jiyuan,
Lü Ling, Hao Yue, Guo Lixin

37.
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using
a micro-Raman technique.

Chinese Physics B, Vol.21, No.7, pp:077304(3), 2012. Yang Liyuan, Xue Xiaoyong, Zhang Kai, Zheng Xuefeng,
Ma Xiaohua, Hao Yue

38.
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer.
Chinese Physics B, Vol.21, No.7, pp:077103(5), 2012. Zhang Wei, Xue Junshuai, Zhou Xiaowei, Zhang Yue,
Liu Ziyang, Zhang Jincheng, Hao Yue

39.
Investigation of 4H-SiC metal-insulation-semiconductor structure with Al2O3/SiO2 stacked dielectric.
Chinese Physics B, Vol. 21, No. 8, pp:087701(4), 2012. Tang Xiaoyan, Song Qingw, Zhang Yuming, Zhang Yimen,
Jia Renxu, Lü Hongliang, Wang Yuehu.

40.
Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition.
Chinese Physics B,
Vol.21, No.8, pp:087702, 2012. Fan Jibin, Liu Hongxia, Gao Bo, Ma Fei, Zhuo Qingqing,
Hao Yue

41.
Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer.
Chinese Physics B, Vol.21, No.8, pp:088502(4), 2012. Zhang Qian, Zhang Yuming, Yuan Lei, Zhang Yimen,
Tang Xiaoyan, Song Qingwen.

42.
A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs.
Chinese Physics B, Vol.21, No.10, pp:107306(7), 2012. Ma Fei, Liu Hongxia, Fan Jibin, Wang Shulong.
43.
Influence of double AlN buffer layers on the qualities of GaN films prepared by metal organic chemical vapour
deposition.

Chinese Physics B, Vol.21, No.12, pp:126804(5), 2012. Lin Zhiyu, Zhang Jincheng, Zhou Hao, Li Xiaogang,
Meng Fanna,Zhang Linxia, Ai Shan, Xu Shengrui, Zhao Yi, Hao Yue

44.
Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and
Semipolar (11-22) GaN.
Chinese Physics Letters, Vol.29, No.1, pp:017803(3), 2012. Xu Shengrui, Lin Zhiyu, Xue Xiaoyong,
Liu Ziyang, Ma Juncai, Jiang Teng, Mao Wei, Wang Danghui.

45.AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3
Laminated Dielectric by Atomic Layer Deposition.

Chinese Physics Letters, Vol.29, No.2, pp:028501(4), 2012. Bi Zhiwei, Hao Yue, Feng Qian, Gao Zhiyuan,
Zhang Jincheng,Mao Wei, Zhang Kai, Ma Xiaohua, Liu Hongxia, Yang Lin'an, Mei Nan, Chang Yongming.

46. Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k
Gate Dielectric.

Chinese Physics Letters, Vol.29, No.12, pp:127301(4), 2012. Liu Hongxia, Ma Fei.
47.
The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT.

Science China: Physics, Mechanics & Astronomy, Vol.55, No.1, pp:40–43, 2012. Bi Zhiwei, Feng Qian,
Zhang Jincheng, Lv Ling, Mao Wei, Gu Wenping, Ma Xiaohua, Hao Yue.

48.
Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate.
SCIENCE CHINA: Physics, Mechanics & Astronomy, Vol.55, No.12, pp:2383-2388, 2012. Wang Danghui,
Zhou Hao, Zhang Jincheng, Xu Shengrui, Zhang Linxia, Meng Fanna, Ai Shan, Hao Yue.

49.
Atomic layer deposited high-k HfxAl(1-x)O as an alternative gate dielectric for 4H-SiC MIS based transistors.
Science China Technological Sciences,Vol.55, No.3, pp:606-609, 2012. Song QingWen, Zhang YuMing,
Zhang YiMen, Tang XiaoYan, Jia RenXu
50.
Proton irradiation effects on HVPE GaN.
Science China Technological Sciences, Vol.55, No.9, pp:2432-2435, 2012. Lü Ling, Hao Yue, Zheng Xuefeng, Z
hang Jincheng, Xu Shengrui, Lin Zhiyu, Ai Shan, Meng Fanna.

51.
Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC.
Science China Technological Sciences,2012. Song QingWen, Zhang YuMing, Zhang YiMen,Tang XiaoYan
52.Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor
using La2O3 gate dielectric.

Science China Technological Sciences,Article in Press, 2012.Feng Qian, Wang Qiang, Xing Tao, Li Qian,
Hao Yue

53.
异质栅全耗尽应变硅金属氧化物半导体模型化研究.
物理学报, Vol.61, No.1, pp:017105(6), 2012. 曹磊, 刘红侠, 王冠宇.
54.
3 MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响.

物理学报,Vol.61, No.5, pp:057202(8), 2012. 吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃.
55.
极化效应对AlGaN/GaN异质结p-i-n光探测器的影响.
物理学报, Vol.61, No.5, pp: 057802(7), 2012. 刘红侠, 高博, 卓青青, 王勇淮.
56.
套刻偏差对4H-SiC浮动结JBS二极管的影响研究.
物理学报, Vol. 61, No. 8, pp:088501(5), 2012.汤晓燕, 戴小伟, 张玉明, 张义门.
57.
量子阱Si/SiGe/Sip型场效应管阈值电压和沟道空穴面密度模型.
物理学报, Vol.61, No.16, pp: 166101(7), 2012. 李立, 刘红侠, 杨兆年.
58.
新型SOANN埋层SOI器件的自加热效应研究.
物理学报, Vol. 61, No.17, pp:177301(6), 2012. 曹磊, 刘红侠.
59.
斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究.
物理学报, Vol.61, No.18, pp:186103(6), 2012. 林志宇, 张进成, 许晟瑞, 吕玲, 刘子扬, 马俊彩, 薛晓咏, 薛军帅,
郝跃
.
60.
NMOS器件中单粒子瞬态电流收集机制的二维数值分析.
物理学报, Vol. 61, No. 21, pp: 218501(7), 2012. 卓青青, 刘红侠, 郝跃

 

61.偏置条件对SOI NMOS器件总剂量辐照效应的影响.
物理学报, Vol. 61, No. 22, pp: 220702(6), 2012. 卓青青,刘红侠,杨兆年,蔡惠民,郝跃.
62.
考虑量子效应的高k栅介质SOIMOSFET特性研究.
物理学报, Vol. 61, No. 24, pp: 247303(6), 2012. 曹磊, 刘红侠.
63.
低剂量率60Co γ射线辐照下SOIMOS器件的退化机理.
物理学报, Vol. 61, No. 24, pp: 246101(7), 2012.商怀超, 刘红侠, 卓青青.
64.
栅长对PD SOI NMOS器件总剂量辐照效应影响的实验研究.
物理学报, Vol. 61, No. 24, pp: 240703(6), 2012. 彭里, 卓青青, 刘红侠, 蔡惠民.
65.
Investigation of the influence of deposition temperature on ALD deposite HfO2 high k gate material.
Xi'an Dianzi Keji Daxue Xuebao,
Vol.39, No.2, pp:164-167, 2012. Kuang Qianwei, Liu Hongxia, Fan Jiwu,
Ma Fei, Zhang Yanlei

66.
Fabrication of the uniaxial stained SOI wafer by mechanical bending.
Xi'an Dianzi Keji Daxue Xuebao, Vol 39, No 3, pp:209-212, 2012. Dai Xianying, Wang Lin, Yang Cheng,
Zheng Ruochuan, Zhang Heming, Hao Yue

67.
Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation.
Journal Wuhan Universityof Technology, Materials Science Edition, Vol27, No.3, pp:415-417, 2012. Jia Renxu,
Zhang Yuming, Zhang Yimen

68.
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage.
Journal of Semiconductors
, Vol.33, No.1, pp:014002(5), 2012. Ma Juncai, Zhang Jincheng, Xue Junshuai,
Lin Zhiyu, Liu Ziyang, Xue Xiaoyong, Ma Xiaohua, Hao Yue.

69.
AlGaN/GaN HEMTs with 0.2 m V-gate recesses for X-band application.
Journal of Semiconductors, Vol.33, No.3, pp:034003(4), 2012. Wang Chong, He Yunlong, Zheng Xuefeng, Hao Yue,
Ma Xiaohua, Zhang Jincheng.

70.
Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs.
Journal of Semiconductors, Vol.33, No.5, pp:054007(5), 2012. Zhong Yinghui, Wang Xiantai, Su Yongbo,
Cao Yuxiong, Jin Zhi, Zhang Yuming, Liu Xinyu.

71.
An 88 nm gate-length In0.53Ga0.47As/In 0.52Al0.48As InP-based HEMT with fmax of 201 GHz.
Journal of Semiconductors, Vol.33, No.7, pp:074004(4), 2012. Zhong Yinghui, Wang Xiantai, Su Yongbo,
Cao Yuxiong, Jin Zhi, Zhang Yuming, Liu Xinyu.

72.
Progress in Group III Nitride Semiconductor Electronic Devices.
Journal of Semiconductors, Vol.33, No.8, pp:081001 (8 ), 2012. Hao Yue, Zhang Jinfeng, Shen Bo, Liu Xinyu
73.
A novel high performance ESD power clamp circuit with a small area.
Journal of Semiconductors, Vol.33, No.9, pp:095006(7), 2012. Zhaonian Yang, Hongxia Liu, Li Li, Qingqing Zhuo.

 

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